FGA20S125P Fairchild Semiconductor, FGA20S125P Datasheet - Page 4

• Manufacturer Part Number: FGA20S125P
• Description: IGBT Transistors 2.5A Output Current GateDrive Optocopler
• Manufacturer: Fairchild Semiconductor

Specifications of FGA20S125P

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1250 V
• Collector-emitter Saturation Voltage: 2.44 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 40 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-3PN
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

© 2012 Fairchild Semiconductor Corporation
FGA20S125P Rev. C3
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge
Figure 9. Gate Charge Characteristics
Figure 11. Turn-On Characteristics vs
200
15
12
9
6
3
0
20
16
12
1
5
8
4
0
0
4
Common Emitter
T
C
10
= 25
o
Gate Resistance
I
C
C
20
Gate-Emitter Voltage, V
= 10A
30
t
t
d(on)
Gate Charge, Q
r
Gate Resistance, R
8
V
30
CC
= 200V
60
40
12
20A
Common Emitter
V
I
T
T
C
C
C
g
CC
= 20A
[nC]
= 25
= 175
50
= 600V, V
400V
G
Common Emitter
T
o
GE
C
[
C
o
Ω
= 175
90
C
[V]
]
16
60
GE
40A
o
600V
C
= 15V
70
120
20
4
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
Figure 12. Turn-off Characteristics vs.
10000
10000
1000
1000
0.01
100
100
100
0.1
10
10
1
1
1
0
Common Emitter
V
I
T
T
C
*Notes:
Common Emitter
V
T
C
C
CC
C
GE
= 20A
1. T
2. T
3. Single Pulse
= 25
= 175
Gate Resistance
= 25
= 600V, V
10
Collector-Emitter Voltage, V
= 0V, f = 1MHz
5
Collector-Emitter Voltage, V
C
J
o
= 175
o
= 25
C
o
C
C
Gate Resistance, R
20
o
C
o
10
GE
10
C
= 15V
30
15
40
100
G
20
50
[
Ω
t
d(off)
C
C
C
CE
]
CE
ies
oes
res
t
www.fairchildsemi.com
f
[V]
[V]
60
25
100
1ms
10ms
DC
10
1000
μ
μ
s
s
70
2000
30