FGH30S130P Fairchild Semiconductor, FGH30S130P Datasheet - Page 4

• Manufacturer Part Number: FGH30S130P
• Description: IGBT Transistors 1300V 30A FS SA Trench IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30S130P

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1300 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 60 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-3PN
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C0
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate Charge Characteristics
Figure 11. Turn-On Characteristics vs
20
16
12
15
12
100
8
4
0
9
6
3
0
500
20
4
0
Common Emitter
T
I
C
C
= 15A
10
= 25
50
Gate-Emitter Voltage, V
o
Gate Resistance
C
100
20
8
Gate Charge, Q
t
t
r
d(on)
Gate Resistance, R
V
CC
30A
150
30
= 200V
60A
12
200
40
Common Emitter
V
I
T
T
C
g
C
C
CC
[nC]
= 30A
Common Emitter
T
250
= 25
= 175
C
= 600V, V
50
GE
= 175
400V
G
o
16
C
[V]
o
[
C

300
]
o
60
C
GE
GE
600V
350
= 15V
70
20
4
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
Figure 12. Turn-off Characteristics vs.
10000
10000
1000
1000
100
0.01
100
10
100
0.1
10
0.1
1
1
0
Common Emitter
V
T
Common Emitter
V
I
T
T
*Notes:
C
C
C
CC
GE
C
1. T
2. T
3. Single Pulse
= 30A
Collector-Emitter Voltage, V
= 25
= 175
Gate Resistance
= 25
= 600V, V
10
= 0V, f = 1MHz
Collector-Emitter Voltage, V
C
J
= 175
o
= 25
o
C
o
C
1
C
Gate Resistance, R
20
o
o
C
C
GE
= 15V
30
10
40
100
G
10
DC
50
[
10 ms
C
t

C
C
d(off)
CE
ies
CE
oes
res
1ms
]
100
t
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[V]
[V]
f
60

10
s
20
1000

s
70
30