FGH30S130P Fairchild Semiconductor, FGH30S130P Datasheet - Page 4
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FGH30S130P
Manufacturer Part Number
FGH30S130P
Description
IGBT Transistors 1300V 30A FS SA Trench IGBT
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH30S130P.pdf
(8 pages)
Specifications of FGH30S130P
Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
1300 V
Collector-emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current At 25 C
60 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-3PN
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FGH30S130P
Manufacturer:
FSC
Quantity:
1 000
©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C0
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate Charge Characteristics
Figure 11. Turn-On Characteristics vs
20
16
12
15
12
100
8
4
0
9
6
3
0
500
20
4
0
Common Emitter
T
I
C
C
= 15A
10
= 25
50
Gate-Emitter Voltage, V
o
Gate Resistance
C
100
20
8
Gate Charge, Q
t
t
r
d(on)
Gate Resistance, R
V
CC
30A
150
30
= 200V
60A
12
200
40
Common Emitter
V
I
T
T
C
g
C
C
CC
[nC]
= 30A
Common Emitter
T
250
= 25
= 175
C
= 600V, V
50
GE
= 175
400V
G
o
16
C
[V]
o
[
C
300
]
o
60
C
GE
GE
600V
350
= 15V
70
20
4
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
Figure 12. Turn-off Characteristics vs.
10000
10000
1000
1000
100
0.01
100
10
100
0.1
10
0.1
1
1
0
Common Emitter
V
T
Common Emitter
V
I
T
T
*Notes:
C
C
C
CC
GE
C
1. T
2. T
3. Single Pulse
= 30A
Collector-Emitter Voltage, V
= 25
= 175
Gate Resistance
= 25
= 600V, V
10
= 0V, f = 1MHz
Collector-Emitter Voltage, V
C
J
= 175
o
= 25
o
C
o
C
1
C
Gate Resistance, R
20
o
o
C
C
GE
= 15V
30
10
40
100
G
10
DC
50
[
10 ms
C
t
C
C
d(off)
CE
ies
CE
oes
res
1ms
]
100
t
www.fairchildsemi.com
[V]
[V]
f
60
10
s
20
1000
s
70
30