SQM200N04-1M1L-GE3 Vishay/Siliconix, SQM200N04-1M1L-GE3 Datasheet

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SQM200N04-1M1L-GE3

Manufacturer Part Number
SQM200N04-1M1L-GE3
Description
MOSFET 40V 200A, 375W Automotive
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SQM200N04-1M1L-GE3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Continuous Drain Current
200 A
Resistance Drain-source Rds (on)
0.0011 Ohms
Mounting Style
SMD/SMT
Package / Case
TO-263-7L
Fall Time
189 ns
Forward Transconductance Gfs (max / Min)
219 S
Gate Charge Qg
413 nC
Power Dissipation
375 W
Rise Time
18 ns
Tradename
TrenchFET
Typical Turn-off Delay Time
665 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQM200N04-1M1L-GE3
Manufacturer:
VISHAY
Quantity:
200
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-2164-Rev. A, 24-Sep-12
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
G
DS
DS(on)
DS(on)
(A)
TO-263-7L
S S
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
(V)
() at V
() at V
D
S S S
GS
GS
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
www.vishay.com
= 10 V
= 4.5 V
Drain connected to Tab
b
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
a
b
For technical questions, contact:
G
N-Channel MOSFET
a
0.0011
0.0013
Single
C
200
40
= 25 °C, unless otherwise noted)
D
S
PCB Mount
T
T
L = 0.1 mH
T
T
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
c
1
automostechsupport@vishay.com
TO-263-7L
SQM200N04-1m1L-GE3
FEATURES
• TrenchFET
• Package with Low Thermal Resistance
• 100 % R
• AEC-Q101 Qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
DM
thJA
thJC
I
I
AS
GS
DS
D
AS
S
D
stg
g
www.vishay.com/doc?91000
and UIS Tested
®
Power MOSFET
- 55 to + 175
d
SQM200N04-1m1L
LIMIT
LIMIT
± 20
200
200
200
600
100
500
375
125
0.4
40
40
Vishay Siliconix
Document Number: 62679
UNIT
°C/W
UNIT
mJ
°C
W
V
A

SQM200N04-1M1L-GE3 Summary of contents

Page 1

... Package with Low Thermal Resistance 0.0011 • 100 % R g 0.0013 • AEC-Q101 Qualified 200 • Material categorization: Single For definitions of compliance please see www.vishay.com/doc?99912 N-Channel MOSFET TO-263-7L SQM200N04-1m1L-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 °C C ...

Page 2

...  GEN d(off  2 automostechsupport@vishay.com www.vishay.com/doc?91000 SQM200N04-1m1L Vishay Siliconix MIN. TYP. MAX 1.5 2.0 2 ± 100 = 125 ° 175 ° 500 J 5 V 200 ...

Page 3

... SQM200N04-1m1L Vishay Siliconix = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics = - 55 ° ° 125 ° ...

Page 4

... On-Resistance vs. Gate-to-Source Voltage 250 μ 125 150 175 - Drain Source Breakdown vs. Junction Temperature 4 automostechsupport@vishay.com SQM200N04-1m1L Vishay Siliconix 4 100 125 150 T - Junction Temperature (° 150 ° ° ...

Page 5

... V - Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area - Square Wave Pulse Duration (s) 5 automostechsupport@vishay.com SQM200N04-1m1L Vishay Siliconix 100 μ 100 ms 100 10 100 1000 Document Number: 62679 www.vishay.com/doc?91000 ...

Page 6

... S12-2164-Rev. A, 24-Sep-12 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Square Wave Pulse Duration (s) 6 automostechsupport@vishay.com SQM200N04-1m1L Vishay Siliconix - Document Number: 62679 www.vishay.com/doc?91000 ...

Page 7

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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