SQM200N04-1M1L-GE3 Vishay/Siliconix, SQM200N04-1M1L-GE3 Datasheet - Page 2

• Manufacturer Part Number: SQM200N04-1M1L-GE3
• Description: MOSFET 40V 200A, 375W Automotive
• Manufacturer: Vishay/Siliconix

Specifications of SQM200N04-1M1L-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 200 A
• Resistance Drain-source Rds (on): 0.0011 Ohms
• Mounting Style: SMD/SMT
• Package / Case: TO-263-7L
• Fall Time: 189 ns
• Forward Transconductance Gfs (max / Min): 219 S
• Gate Charge Qg: 413 nC
• Power Dissipation: 375 W
• Rise Time: 18 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 665 ns

Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2164-Rev. A, 24-Sep-12
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics
Pulsed Current
Forward Voltage




THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
c
b
c
a
www.vishay.com
c
c
c
c
c
a
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
b
C
= 25 °C, unless otherwise noted)
a
For technical questions, contact:
SYMBOL
R
V
I
t
t
I
C
V
I
C
C
Q
V
GS(th)
D(on)
DS(on)
Q
d(on)
d(off)
I
GSS
DSS
g
Q
R
SM
t
oss
t
DS
rss
SD
iss
gd
fs
gs
r
f
g
g
b

V
V
V
V
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
I
D
= 4.5 V
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
= 0 V
 20 A, V
2
[e-mail]
V
V
V
V
DS
V
TEST CONDITIONS
DS
GS
I
F
DS
DD
= 0 V, V
= 60 A, V
= V
= 0 V, I
= 15 V, I
= 20 V, R
f = 1 MHz
GEN
GS
V
V
I
I
V
V
DS
DS
D
D
, I
DS
DS
= 30 A, T
= 30 A, T
= 10 V, R
D
GS
D
= 40 V, T
= 40 V, T
= 25 V, f = 1 MHz
GS
= 20 V, I
= 250 μA
D
= 250 μA
V
= ± 20 V
L
V
I
I
= 30 A
DS
D
D
www.vishay.com/doc?91000
= 0 V
DS
= 1 
= 30 A
= 20 A
= 40 V
5 V
J
J
g
J
J
= 125 °C
= 175 °C
D
= 1 
= 125 °C
= 175 °C
= 20 A
SQM200N04-1m1L
MIN.
200
1.5
4.2
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Siliconix
Document Number: 62679
0.0008 0.0011
0.0009 0.0013
16 524 20 655
TYP.
2060
56.6
45.4
219
484
275
443
126
2.0
8.5
0.8
13
12
-
-
-
-
-
-
-
-
-
0.0019
0.0023
MAX.
± 100
2575
12.8
500
605
413
665
189
600
2.5
1.5
50
20
18
1
-
-
-
-
-
UNIT
nC
nA
μA
pF
ns


V
A
S
A
V