SQM200N04-1M1L-GE3 Vishay/Siliconix, SQM200N04-1M1L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQM200N04-1M1L-GE3
• Description: MOSFET 40V 200A, 375W Automotive
• Manufacturer: Vishay/Siliconix

Specifications of SQM200N04-1M1L-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 200 A
• Resistance Drain-source Rds (on): 0.0011 Ohms
• Mounting Style: SMD/SMT
• Package / Case: TO-263-7L
• Fall Time: 189 ns
• Forward Transconductance Gfs (max / Min): 219 S
• Gate Charge Qg: 413 nC
• Power Dissipation: 375 W
• Rise Time: 18 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 665 ns

TYPICAL CHARACTERISTICS (T
S12-2164-Rev. A, 24-Sep-12
0.0025
0.0020
0.0015
0.0010
0.0005
0.0000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
250
200
150
100
2.0
1.6
1.2
0.8
0.4
0.0
50
0
0
0
0
V
T
T
GS
C
C
On-Resistance vs. Drain Current
= 125 °C
20
= 25 °C
= 10 V thru 6 V
www.vishay.com
2
1
V
V
Transfer Characteristics
DS
Output Characteristics
GS
- Drain-to-Source Voltage (V)
I
- Gate-to-Source Voltage (V)
D
V
40
- Drain Current (A)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
GS
V
GS
= 5 V
4
2
V
= 4 V
GS
60
= 4.5 V
For technical questions, contact:
V
6
3
V
GS
GS
T
80
= 10 V
C
= 3 V
= - 55 °C
A
= 25 °C, unless otherwise noted)
8
4
100
120
10
5
3
[e-mail]
25 000
20 000
15 000
10 000
5000
450
360
270
180
160
120
90
80
40
0
0
0
0
0
0
T
C
www.vishay.com/doc?91000
C
= 125 °C
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14
8
2
V
V
Transfer Characteristics
DS
GS
- Drain-to-Source Voltage (V)
Transconductance
- Gate-to-Source Voltage (V)
C
T
I
D
oss
C
- Drain Current (A)
Capacitance
SQM200N04-1m1L
= 25 °C
16
28
4
T
T
C
C
C
= - 55 °C
= 25 °C
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24
42
6
Vishay Siliconix
Document Number: 62679
T
C
T
C
= - 55 °C
= 125 °C
32
56
8
40
10
70