IGW50N65F5FKSA1 Infineon Technologies, IGW50N65F5FKSA1 Datasheet - Page 13
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IGW50N65F5FKSA1
Manufacturer Part Number
IGW50N65F5FKSA1
Description
IGBT Transistors IGBT PRODUCTS
Manufacturer
Infineon Technologies
Datasheet
1.IGW50N65F5FKSA1.pdf
(14 pages)
Specifications of IGW50N65F5FKSA1
Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
80 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
305 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247-3
Continuous Collector Current Ic Max
56 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Part # Aliases
IGW50N65F5 SP000973426
IGW50N65F5
Highspeedswitchingseriesfifthgeneration
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13
Rev.1.1,2012-11-09