IKA15N65F5XKSA1 Infineon Technologies, IKA15N65F5XKSA1 Datasheet - Page 10

• Manufacturer Part Number: IKA15N65F5XKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKA15N65F5XKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 14 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 33.3 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 8.5 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKA15N65F5 SP000973416

Figure 9. Typicalswitchingtimesasafunctionofgate
Figure 11. Gate-emitterthresholdvoltageasafunction
1000
100
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
1
5
0
resistor
(inductiveload,T
V
Figure E)
ofjunctiontemperature
(I
GE
15
T
C
25
t
t
t
t
=15/0V,I
vj
=0.15mA)
d(off)
f
d(on)
r
,JUNCTIONTEMPERATURE[°C]
25
r
G
50
,GATERESISTOR[ ]
typ.
min.
max.
C
=7,5A,Dynamictestcircuitin
35
75
vj
=150°C,V
45
100
55
CE
125
=400V,
65
Highspeedswitchingseriesfifthgeneration
150
75
175
85
10
Figure 10. Typicalswitchingtimesasafunctionof
Figure 12. Typicalswitchingenergylossesasa
1000
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1
25
0
junctiontemperature
(inductiveload,V
I
Figure E)
functionofcollectorcurrent
(inductiveload,T
V
Figure E)
5
C
T
GE
=7,5A,r
t
t
t
t
E
E
E
vj
d(off)
f
d(on)
r
50
,JUNCTIONTEMPERATURE[°C]
off
on
ts
=15/0V,r
I
C
10
,COLLECTORCURRENT[A]
G
75
15
=39 ,Dynamictestcircuitin
G
=39 ,Dynamictestcircuitin
20
CE
vj
100
=150°C,V
=400V,V
25
IKA15N65F5
125
30
Rev.1.1,2012-11-09
GE
CE
=400V,
=15/0V,
35
150
40
175
45