IPD50R500CE Infineon Technologies, IPD50R500CE Datasheet - Page 13

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IPD50R500CE

Manufacturer Part Number
IPD50R500CE
Description
MOSFET 500V 500 RDS CoolMOS Superjunction MOSFET
Manufacturer
Infineon Technologies
Datasheet

Specifications of IPD50R500CE

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.6 A
Resistance Drain-source Rds (on)
500 mOhms
Mounting Style
Through Hole
Package / Case
TO-252
Gate Charge Qg
18.7 nC
Power Dissipation
57 W
Tradename
CoolMOS
Part # Aliases
IPD50R500CEBTMA1

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Company
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Manufacturer
Quantity
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