FDMS86152 Fairchild Semiconductor, FDMS86152 Datasheet - Page 4

• Manufacturer Part Number: FDMS86152
• Description: MOSFET 100V N-Channel Power Trench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86152

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 45 A
• Resistance Drain-source Rds (on): 6 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 42 S
• Gate Charge Qg: 36 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Rise Time: 6 ns
• Typical Turn-off Delay Time: 25 ns

©2013 Fairchild Semiconductor Corporation
FDMS86152 Rev.C
Typical Characteristics
1000
0.01
100
100
Figure 7.
0.1
10
10
10
8
6
4
2
0
1
0.01
1
0.01
0
Figure 9.
THIS AREA IS
LIMITED BY r
Figure 11.
I
SINGLE PULSE
T
R
T
D
J
A
θ
= 14 A
JA
= MAX RATED
= 25
= 115
Switching Capability
Gate Charge Characteristics
V
o
0.1
C
DS
0.1
Operating Area
t
Unclamped Inductive
10
AV
o
, DRAIN to SOURCE VOLTAGE (V)
C/W
DS(on)
, TIME IN AVALANCHE (ms)
Q
Forward Bias Safe
g
CURVE BENT TO
MEASURED DATA
, GATE CHARGE (nC)
V
DD
1
= 25 V
T
J
1
= 125
20
T
T
V
J
J
DD
= 25
o
C
= 25 °C unless otherwise noted
= 50 V
10
o
T
C
J
10
= 100
30
V
o
DD
100
C
= 75 V
10 s
1 ms
10 ms
100 ms
100
1 s
DC
100200
μ
s
600
40
4
10000
1000
5000
1000
100
100
100
0.5
80
60
40
20
10
10
Figure 10.
0
1
10
0.1
25
Figure 12. Single Pulse Maximum
-4
f = 1 MHz
V
Limited by Package
Figure 8.
GS
Current vs Case Temperature
= 0 V
10
V
-3
DS
50
Maximum Continuous Drain
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
V
T
GS
10
C
Capacitance vs Drain
,
t, PULSE WIDTH (sec)
= 6 V
-2
CASE TEMPERATURE
1
75
10
-1
V
1
100
GS
= 10 V
10
SINGLE PULSE
R
T
R
10
A
θ
(
θ
o
JA
= 25
JC
C
)
= 115
125
= 1.0
www.fairchildsemi.com
o
C
100
o
o
C/W
C/W
C
C
C
oss
iss
rss
1000
100
150