BSS139H6327XT Infineon Technologies, BSS139H6327XT Datasheet - Page 2

• Manufacturer Part Number: BSS139H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS139H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 mA
• Resistance Drain-source Rds (on): 14 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 182 ns
• Gate Charge Qg: 2.3 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 5.4 ns
• Typical Turn-off Delay Time: 43 ns
• Part # Aliases: BSS139 BSS139H6327XTSA1 H6327

Rev. 1.
8
2)
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
Transconductance
Threshold voltage V
J
K
L
M
N
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
GS(th)
sorted in bands
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
I
R
g
V
D(off)
GSS
DSS
fs
(BR)DSS
GS(th)
GS(th)
thJA
DS(on)
2)
minimal footprint
V
V
V
V
V
V
V
V
V
V
|V
I
V
page 2
D
GS
DS
DS
GS
DS
GS
GS
GS
GS
GS
DS
=0.08 A
DS
=3 V, I
=250 V,
=250 V,
=3 V, I
=-3 V, I
=-3 V, T
=-3 V, T
=20 V, V
=0 V, V
=0 V, I
=10 V,I
|>2|I
D
|R
D
D
D
D
D
DS
=56 µA
=56 µA
=15 mA
j
j
=0.1 mA
=250 µA
=25 °C
=125 °C
DS
DS(on)max
=10 V
=0 V
,
0.060
-1.35
-1.65
min.
250
-2.1
-1.2
-1.5
-1.8
30
-
-
-
-
-
-
Values
12.5
0.13
typ.
-1.4
7.8
-
-
-
-
-
-
-
-
-
-
-
max.
-1.15
-1.45
-1.3
-1.6
350
0.1
10
10
30
14
-1
-1
-
-
-
BSS139
Unit
K/W
V
µA
nA
mA
Ω
S
V
2009-08-18