IPP060N06NAKSA1 Infineon Technologies, IPP060N06NAKSA1 Datasheet

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IPP060N06NAKSA1

Manufacturer Part Number
IPP060N06NAKSA1
Description
MOSFET MV POWER MOS
Manufacturer
Infineon Technologies
Datasheet

Specifications of IPP060N06NAKSA1

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
45 A
Resistance Drain-source Rds (on)
6 mOhms
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
PG-TO220-3
Fall Time
7 ns
Forward Transconductance Gfs (max / Min)
73 S
Gate Charge Qg
27 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
83 W
Rise Time
12 ns
Typical Turn-off Delay Time
20 ns
Part # Aliases
IPP060N06N IPP060N06NXK
Rev.2.2
1)
2)
3)
4)
connection. PCB is vertical in still air.
Type
OptiMOS
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
J-STD20 and JESD22
See figure 3 for more detailed information
See figure 13 for more detailed information
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
Type
IPP060N06N
TM
Power-Transistor
2)
j
=25 °C, unless otherwise specified
Package
PG-TO220-3
3)
1)
for target applications
Symbol Conditions
I
I
E
V
D
D,pulse
AS
GS
Marking
060N06N
V
V
V
R
T
I
D
C
GS
GS
GS
thJA
=45 A, R
page 1
=25 °C
=10 V, T
=10 V, T
=10 V, T
=50K/W
GS
2
(one layer, 70 µm thick) copper area for drain
C
C
C
=25 W
V
R
I
Q
Q
Product Summary
=25 °C
=100 °C
=25 °C,
D
DS
DS(on),max
OSS
G
(0V..10V)
PG-TO220-3
Value
180
±20
45
45
17
60
IPP060N06N
60
6.0
45
32
27
2012-12-20
Unit
A
mJ
V
V
mW
A
nC
nC

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IPP060N06NAKSA1 Summary of contents

Page 1

Type OptiMOS TM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 ...

Page 2

Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 5) Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge ...

Page 4

Power dissipation P =f(T ) tot C 100 100 T [° Safe operating area I =f =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter 180 160 140 120 100 0.0 0.5 1.0 1 Typ. transfer characteristics ...

Page 6

Drain-source on-state resistance =10 V DS(on max -60 - [° Typ. ...

Page 7

Avalanche characteristics = =f parameter: T j(start) 100 125 °C 100 ° [µ Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline Rev.2.2 PG-TO220-3 page 8 IPP060N06N 2012-12-20 ...

Page 9

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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