IPD105N03LGATMA1 Infineon Technologies, IPD105N03LGATMA1 Datasheet - Page 11

• Manufacturer Part Number: IPD105N03LGATMA1
• Description: MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPD105N03LGATMA1

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 35 A
• Resistance Drain-source Rds (on): 10.5 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO252-3-11
• Fall Time: 2.4 ns
• Forward Transconductance Gfs (max / Min): 51 S
• Gate Charge Qg: 14 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 38 W
• Rise Time: 14 ns
• Typical Turn-off Delay Time: 14 ns
• Part # Aliases: IPD105N03LGBTMA1 SP000796910