SPP16N50C3XKSA1 Infineon Technologies, SPP16N50C3XKSA1 Datasheet - Page 11

• Manufacturer Part Number: SPP16N50C3XKSA1
• Description: MOSFET
• Manufacturer: Infineon Technologies

Specifications of SPP16N50C3XKSA1

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 560 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.28 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 8 ns
• Forward Transconductance Gfs (max / Min): 14 S
• Gate Charge Qg: 66 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 160 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 50 ns
• Part # Aliases: SP000681056 SPP16N50C3HKSA1

SPP16N50C3
SPI16N50C3, SPA16N50C3
PG-TO220-3-1, PG-TO220-3-21
p age 11
Rev. 3.2
2009-12-22