FCP600N60Z Fairchild Semiconductor, FCP600N60Z Datasheet - Page 2
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FCP600N60Z
Manufacturer Part Number
FCP600N60Z
Description
MOSFET 600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FCP600N60Z.pdf
(10 pages)
Specifications of FCP600N60Z
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
4.7 A
Resistance Drain-source Rds (on)
600 mOhms
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
28 ns
Forward Transconductance Gfs (max / Min)
6.7 S
Gate Charge Qg
26 nC
Minimum Operating Temperature
-55 C
Power Dissipation
89 W
Rise Time
24 ns
Typical Turn-off Delay Time
88 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCP600N60Z
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
BV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
DS(on)
iss
oss
rss
oss
oss
SD
g(tot)
gs
gd
rr
AS
SD
Device Marking
Symbol
DSS
DS
FCPF600N60Z
J
= 1.5 A, V
FCP600N60Z
DSS
≤ 3.7 A, di/dt ≤ 200 A/μs, V
eff.
DD
= 50 V, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25 Ω, Starting T
DD
FCPF600N60Z
≤ BV
FCP600N60Z
Device
DSS
Parameter
, Starting T
J
= 25°C
T
J
C
= 25°C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
V
V
I
V
V
V
V
V
V
dI
V
V
V
V
f = 1 MHz
V
V
V
Drain open
V
V
D
V
GS
GS
GS
DS
DS
GS
GS
GS
DS
DD
GS
GS
GS
DS
DS
DS
DS
F
GS
= 10 mA, Referenced to 25
/dt = 100 A/μs
= 480 V, V
= 480 V, T
= 0 V, I
= 0 V, I
= 0 V, I
= 0 V, I
= ±20 V, V
= 0 V, I
= V
= 10 V, I
= 20 V, I
= 25 V, V
= 380 V, V
= 0 V to 480 V, V
= 380 V, I
= 380 V, I
= 10 V, R
= 10 V
DS
Test Conditions
, I
2
D
D
D
SD
SD
Reel Size
D
D
D
= 10 mA, T
= 10 mA, T
= 7.4 A
GS
D
G
= 250 μA
D
= 3.7 A
C
= 3.7 A
= 3.7 A
GS
= 3.7 A
GS
DS
= 3.7 A
= 4.7 Ω
= 3.7 A
= 125
-
-
= 0 V
= 0 V
= 0 V
= 0 V, f = 1.0 MHz
GS
o
C
J
J
= 0 V
= 25°C
= 150°C
o
(Note 4)
(Note 4)
C
Tape Width
-
-
Min.
600
650
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.67
16.5
2.89
0.51
200
700
840
630
2.3
6.7
3.4
7.5
30
74
20
13
39
7
9
-
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
1120
22.2
±10
840
3.5
0.6
7.4
1.2
10
45
26
36
24
88
28
1
50
50
-
-
-
-
-
-
-
-
-
-
-
-
V/
Unit
pF
pF
pF
pF
nC
nC
nC
μC
μA
uA
pF
ns
Ω
ns
ns
ns
ns
Ω
V
V
V
V
S
A
A
V
o
C