IPI80P04P4-05 Infineon Technologies, IPI80P04P4-05 Datasheet - Page 4

• Manufacturer Part Number: IPI80P04P4-05
• Description: MOSFET P-Channel -40V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPI80P04P4-05

• Rohs: yes
• Part # Aliases: IPI80P04P405AKSA1 IPI80P04P405XK SP000652620

Power Bond Technology
Power Bond Technology also increase current rating of a DPAK of upto 100A. Thus a standard
80A D
4
POWER BOND IS INFINEON’S HIGH-CURRENT wirebond technology. It addresses the bondwire
limitation in a MOSFET’s current rating.
Power Bond reduces the R
This also improves the reliability by keeping the wirebonds cooler, even with high currents.
Power Bond Technology allows up to four double-stitch 500μm wirebonds on a single
OptiMOS
DPAK replaces D
89.6
81.7
73.9
66.0
58.1
50.2
42.4
34.5
26.6
°C
Standard bonding
2
PAK can be replaced with a standard 100A DPAK plus 25% increase of output current.
TM
2x500μm
device, which enables a current rating of upto 180A in a TO263-7 package.
More features
Freeze
89.6
80.6
71.6
62.6
53.6
44.6
35.6
26.6
100A
2
PAK
80A
DS(on)
Higher current in
drop of the bondwires and increases the current capability.
1
/
89.6
81.7
73.9
66.0
58.1
50.2
42.4
34.5
26.6
2
°C
PCB space
Power Bond 1
3x500μm
80A
100A
or lower cost
89.4
81.5
73.6
65.7
57.8
49.9
42.0
34.1
26.2
°C
Power Bond 2
4x500μm
30 °C
20 °C
15 °C