IPD50N04S308 Infineon Technologies
IPD50N04S308
Manufacturer Part Number
IPD50N04S308
Description
MOSFET
Manufacturer
Infineon Technologies
Specifications of IPD50N04S308
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Resistance Drain-source Rds (on)
8 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Fall Time
6 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
68 W
Rise Time
7 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
16 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD50N04S308ATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000