IRFP150N_R4942 Fairchild Semiconductor, IRFP150N_R4942 Datasheet - Page 10

• Manufacturer Part Number: IRFP150N_R4942
• Description: MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of IRFP150N_R4942

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 44 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-247
• Fall Time: 61 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 155 W
• Rise Time: 75 ns
• Factory Pack Quantity: 150
• Typical Turn-off Delay Time: 37 ns

SO-8 N-Channel (cont.)
HUF75531SK8
HUFA75531SK8
FDS3590
FDS3512
FDS3992
FDS3912
FDS3601
FDS3672
FDS3670
FDS3680
FDS3682
HUF75631SK8
HUFA75631SK8
FDS3690
FDS3692
FDS3612
FDS2572
FDS2582
FDS2570
HUF75831SK8T
HUFA75831SK8T
FDS2670
FQS4901
FQS4903
SO-8 Complementary N- and P-Channel
FDS8928A
NDH8321C
FDS4501H
FDS8958A
NDH8521C
SI4532DY
NDS9952A
FDS8333C
NDS9958
FDS4559
FQS4900
SO-8 P-Channel
NDS9948
SSD2011A
FDS4675
FDS4935
FDS4935A
FDS6975
FDS8947A
SI4953DY
FDS6993
Products
8
Min (V)
BV DSS
-300
100
100
100
100
100
100
100
100
100
100
100
100
150
150
150
150
150
200
400
500
-20
-20
-30
-30
-30
-30
-60
-60
-60
-40
-30
-30
-30
-30
-30
-30
-12
80
80
80
80
30
30
30
30
30
30
30
30
30
60
60
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Use FDS3682
Use FDS3682
Use FDS3692
Use HUF75831SK8T
Use FDS8928A
Use FDS8958A
Use FDS8333C
0.037
0.062
0.125
0.022
0.035
0.039
0.039
0.047
0.066
0.095
0.095
0.018
0.028
0.052
0.065
0.085
0.055
0.105
0.013
0.023
0.023
0.032
0.052
0.053
0.055
0.03
0.03
0.07
0.48
0.06
0.12
0.13
0.08
0.13
0.08
0.13
0.55
15.5
0.25
0.28
10V
4.2
6.2
-
R DS(ON) Max. (Ohms) @ V GS =
0.65@5V
16@5V
0.055
0.046
0.023
0.095
0.075
0.135
0.017
0.035
0.035
0.045
0.095
0.017
0.085
4.5V
0.03
0.04
0.08
0.19
0.13
0.08
0.2
0.5
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.038
0.072
0.063
0.024
2.5V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.03
1.8V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@ V GS = 5V
Q g (nC) Typ
(Note pg. i)
19.8
12.5
14.5
3.7
5.8
6.3
3.7
9.5
4.7
4.1
1.6
3.6
37
37
23
13
11
14
28
19
35
35
11
14
29
11
35
35
27
20
17
13
18
19
10
15
23
40
15
15
19
5
9
8
-
Maximum Rating
www.fairchildsemi.com
I D (A)
0.45
0.37
6.5
4.5
1.3
7.5
5.5
5.5
4.5
3.4
4.9
4.5
5.5
9.3
5.6
3.9
3.5
3.7
2.9
4.1
3.4
4.5
3.5
1.3
0.3
2.3
4.9
4.3
6.8
11
6
6
4
3
6
3
3
3
4
7
5
2
7
7
6
4
P D (W)
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.4
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2