FDC6310P_Q Fairchild Semiconductor
FDC6310P_Q
Manufacturer Part Number
FDC6310P_Q
Description
MOSFET Dual P-Ch 2.5V Spec Power Trench
Manufacturer
Fairchild Semiconductor
Specifications of FDC6310P_Q
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
- 2.2 A
Resistance Drain-source Rds (on)
0.125 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SSOT-6
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.96 W
Rise Time
12 ns
Typical Turn-off Delay Time
10 ns
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