FDC6392S_Q Fairchild Semiconductor, FDC6392S_Q Datasheet
FDC6392S_Q
Manufacturer Part Number
FDC6392S_Q
Description
MOSFET 20V P-Ch PowerTrench Integrated
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDC6392S_Q.pdf
(6 pages)
Specifications of FDC6392S_Q
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
- 2.2 A
Resistance Drain-source Rds (on)
0.15 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SSOT-6
Fall Time
11 ns
Forward Transconductance Gfs (max / Min)
6 S
Minimum Operating Temperature
- 55 C
Power Dissipation
0.96 W
Rise Time
11 ns
Typical Turn-off Delay Time
13 ns
FDC6392S
20V Integrated P-Channel PowerTrench
General Description
The FDC6392S combines the exceptional performance
of Fairchild's PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in an SSOT-6 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance.
Schottky diode allows its use in a variety of DC/DC
converter topologies.
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
V
I
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
O
J
DSS
GSS
D
RRM
θJA
θJC
, T
Device Marking
STG
.392
SuperSOT
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
SuperSOT™-6
D1
The independently connected
S1
TM
-6
D2
– Continuous
– Pulsed
FDC6392S
G1
Device
Parameter
S2
G2
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1a)
(Note 1)
Features
MOSFET:
• –2.2 A, –20V. R
• Low Gate Charge (3.7nC typ)
• Compact industry standard SuperSOT
Schottky:
• V F < 0.45 V @ 1 A
MOSFET and Schottky Diode
1
2
3
Tape width
R
DS(ON)
DS(ON)
–55 to +150
8mm
Ratings
–2.2
0.96
–20
±12
130
0.9
0.7
–6
20
60
1
= 150 mΩ @ V
= 200 mΩ @ V
6
5
4
April 2002
GS
GS
FDC6392S Rev C(W)
-6 package
3000 units
Quantity
= –4.5V
= –2.5V
Units
°C/W
°C
W
V
V
A
V
A
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FDC6392S_Q Summary of contents
Page 1
... Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device .392 FDC6392S 2002 Fairchild Semiconductor Corporation MOSFET and Schottky Diode Features MOSFET: • –2.2 A, –20V. R • Low Gate Charge (3.7nC typ) • Compact industry standard SuperSOT Schottky: • ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
Page 3
Electrical Characteristics Notes the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of θJA the drain pins guaranteed by design while R θJC ...
Page 4
Typical Characteristics -4.5V -3.0V GS -2.5V 5 -3. 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -2. -4.5V GS 1.4 ...
Page 5
Typical Characteristics -2. - GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics 125 C J 0.1 T ...
Page 6
CROSSVOLT â â â â Rev. H5 ...