FDG6308P_Q Fairchild Semiconductor
FDG6308P_Q
Manufacturer Part Number
FDG6308P_Q
Description
MOSFET Dual P-Ch 1.8V Spec Power Trench
Manufacturer
Fairchild Semiconductor
Specifications of FDG6308P_Q
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 0.6 A
Resistance Drain-source Rds (on)
0.4 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-70-6
Fall Time
15 ns
Forward Transconductance Gfs (max / Min)
2.1 S
Minimum Operating Temperature
- 55 C
Power Dissipation
0.3 W
Rise Time
15 ns
Typical Turn-off Delay Time
7 ns
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