This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... October 2000 PRELIMINARY –4.5 V DS(ON 0. –2.5 V DS(ON 0. –1.8 V DS(ON Ratings Units –20 8 –0.6 –1.8 0.3 W –55 to +150 415 C/W Tape width Quantity 8mm 3000 units FDG6308P Rev B( ...
... JA JA Min Typ Max Units –20 V –15 mV/ C –1 A –100 nA 100 nA –0.4 –0.9 –1 mV/ C 0.27 0.40 0.36 0.55 0.55 0.80 0.35 0.56 –2 A 2.1 S 153 1.6 3.2 ns 1.8 2.5 nC 0.3 nC 0.4 nC –0.25 A –0.77 –1.2 V FDG6308P Rev B (W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -1.8V -2.0V -2.5V -3.0V -3.5V -4.5V 0 DRAIN CURRENT ( -0 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDG6308P Rev B ( 1.2 ...
... DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 415 C 0.01 0 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 415 °C/W JA P(pk ( Duty Cycle 100 FDG6308P Rev B (W) 20 ...