FDG6308 Fairchild Semiconductor, FDG6308 Datasheet - Page 4

• Manufacturer Part Number: FDG6308
• Description: P-Channel 1.8V Specified PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
5
4
3
2
1
0
0.01
Figure 9. Maximum Safe Operating Area.
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
0.1
R
SINGLE PULSE
R
0.001
I
D
DS(ON)
0.01
V
JA
= -0.6A
T
0.1
0.3
GS
A
0.0001
= 415
1
= 25
= -4.5V
LIMIT
o
o
C/W
C
D = 0.5
-V
0.6
0.2
DS
0.1
0.05
SINGLE PULSE
, DRAIN-SOURCE VOLTAGE (V)
Q
0.02
0.01
g
1
, GATE CHARGE (nC)
0.9
0.001
DC
1s
Figure 11. Transient Thermal Response Curve.
100ms
1.2
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
10ms
V
DS
= -5V
10
1ms
1.5
100 s
-15V
0.01
1.8
-10V
100
2.1
t
1
, TIME (sec)
0.1
200
160
120
30
24
18
12
0.0001
80
40
6
0
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
0.001
4
-V
Power Dissipation.
1
DS
C
C
C
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
OSS
RSS
0.01
ISS
8
P(pk)
0.1
Duty Cycle, D = t
T
R
R
J
JA
- T
JA
10
(t) = r(t) + R
A
= 415 °C/W
t
12
1
= P * R
t
2
1
JA
SINGLE PULSE
R
1
(t)
JA
/ t
JA
T
FDG6308P Rev B (W)
2
16
A
10
= 415
= 25
V
f = 1MHz
GS
100
o
o
= 0 V
C
C/W
100
20