FDM606P_Q Fairchild Semiconductor
FDM606P_Q
Manufacturer Part Number
FDM606P_Q
Description
MOSFET P-Ch Power Trench Logic Level 1.8V
Manufacturer
Fairchild Semiconductor
Specifications of FDM606P_Q
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 6.8 A
Resistance Drain-source Rds (on)
0.026 Ohms
Configuration
Single Hex Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MicroFET-8
Fall Time
46 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.92 W
Rise Time
46 ns
Typical Turn-off Delay Time
134 ns