MMBF5459_Q Fairchild Semiconductor, MMBF5459_Q Datasheet - Page 2

• Manufacturer Part Number: MMBF5459_Q
• Description: JFET N-Channel Transistor General Purpose
• Manufacturer: Fairchild Semiconductor

Specifications of MMBF5459_Q

• Transistor Polarity: N-Channel
• Gate-source Breakdown Voltage: - 25 V
• Continuous Drain Current: 9 mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-3
• Power Dissipation: 350 mW

g
g
C
C
NF
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
I
V
I
V
V
Symbol
DSS
fs
os
GSS
iss
rss
(BR)GSS
GS(off)
GS
Typical Characteristics
Electrical Characteristics
*
Pulse Test: Pulse Width 300 ms, Duty Cycle 2%
Forward Transfer Conductance*
Output Conductance*
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
Zero-Gate Voltage Drain Current*
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
Transfer Characteristics
Parameter
TA = 25°C unless otherwise noted
V
V
V
V
V
R
V
I
V
V
V
V
V
V
G
DS
DS
DS
DS
DS
G
GS
GS
DS
DS
DS
DS
DS
= 10 A, V
= 1.0 megohm, BW = 1.0 Hz
= 15 V, V
= 15 V, V
= 15 V, V
= 15 V, V
= 15 V, V
= 15 V, V
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= -15 V, V
= -15 V, V
Test Conditions
N-Channel General Purpose Amplifier
D
D
D
D
GS
GS
GS
GS
GS
DS
GS
DS
DS
= 10 nA
= 100 A
= 200 A
= 400 A
= 0, f = 1.0 kHz
= 0, f = 1.0 kHz
= 0, f = 1.0 MHz
= 0, f = 1.0 MHz
= 0, f = 1.0 kHz,
= 0
= 0
= 0
= 0, T
A
= 100 C
Transfer Characteristics
5457
5458
5459
5457
5458
5459
5457
5458
5459
5457
5458
5459
Min
1000
1500
2000
- 0.5
- 1.0
- 2.0
- 25
1.0
2.0
4.0
Typ
- 2.5
- 3.5
- 4.5
3.0
6.0
9.0
4.5
1.5
10
Max Units
- 200
5000
5500
6000
- 1.0
- 6.0
- 7.0
- 8.0
5.0
9.0
7.0
3.0
3.0
16
50
(continued)
mhos
mhos
mhos
mhos
mA
mA
mA
nA
nA
dB
pF
pF
V
V
V
V
V
V
V
5