IS43R16800C-5TL ISSI, Integrated Silicon Solution Inc, IS43R16800C-5TL Datasheet - Page 35

• Manufacturer Part Number: IS43R16800C-5TL
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R16800C-5TL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R16800C
IC43R16800C
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
10/13/08
A Write command to the consecutive Read command interval: To interrupt the write operation
1. Same
2. Same
3. Different
Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write
WRITE to READ Command Interval (Same bank, same ROW address)
Command
Destination row of the consecutive read
command
Bank
address
DQS
/CK
DM
DQ
CK
operation in this case.
Row address State
Same
Different
Any
WRIT
t0
1 cycle
READ
ACTIVE
—
ACTIVE
IDLE
in0
Data masked
t1
in1
[WRITE to READ delay = 1 clock cycle]
in2
t2
Operation
DM must be input 1 cycle prior to the read command input to prevent from being
written invalid data. In case, the read command is input in the next cycle of the
write command, DM is not necessary.
—*
DM must be input 1 cycle prior to the read command input to prevent from being
written invalid data. In case, the read command is input in the next cycle of the
write command, DM is not necessary.
—*
1
1
CL=3
t3
t4
out0 out1 out2 out3
t5
NOP
t6
t7
High-Z
High-Z
t8
BL = 4
CL = 3
35