IS43R16800C-5TL ISSI, Integrated Silicon Solution Inc, IS43R16800C-5TL Datasheet - Page 8

• Manufacturer Part Number: IS43R16800C-5TL
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R16800C-5TL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R16800C
IC43R16800C
8
Notes: 1. These IDD data are measured under condition that DQ pins are not connected.
DC Characteristics 2 (TA = 0°C to +70 C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter
Input leakage current
Output leakage current
Output high current
Output low current
Pin Capacitance (TA = +25°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter
Input capacitance
Delta input capacitance
Data input/output capacitance
Delta input/output capacitance
Notes: 1. These parameters are measured on conditions: f = 100MHz, VOUT = VDDQ/2, VOUT = 0.2V.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one clock cycle.
6. DQ, DM and DQS transition twice per one clock cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycle.
10. Command/Address stable at ≥ VIH or ≤ VIL.
2. DOUT circuits are disabled.
Symbol
ILI
ILO
IOH
IOL
Cdi1
Symbol
CI1
CI2
Cdi2
CI/O
Cdio
min.
–2
–5
–15.2
15.2
Pins
CK, /CK
All other input pins
CK, /CK
All other input-only pins
DQ, DM, DQS
DQ, DM, DQS
max.
2
5
—
—
min.
2.0
2.0
—
—
4.0
—
Unit
µA
µA
mA
mA
Integrated Silicon Solution, Inc. — www.issi.com
typ.
—
—
—
—
—
—
VDD ≥ VIN ≥ VSS
VDDQ ≥ VOUT ≥ VSS
Test condition
VOUT = 1.95V
VOUT = 0.35V
max.
3.0
3.0
0.25
0.5
5
0.5
Unit
pF
pF
pF
pF
pF
pF
Notes
Notes
1
1
1
1
1, 2
1
Rev. A
10/13/08