IS43R16800C-5TL ISSI, Integrated Silicon Solution Inc, IS43R16800C-5TL Datasheet - Page 37

• Manufacturer Part Number: IS43R16800C-5TL
• Description: IC DDR SDRAM 128MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS43R16800C-5TL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R16800C
IC43R16800C
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
10/13/08
A Read command to the consecutive Precharge command interval (same bank): To output all data
To complete a burst read operation and get a burst length of data, the consecutive precharge command must be
issued tRPD (= BL/ 2 cycles) after the read command is issued.
READ to PRECHARGE Command Interval (same bank): To stop output data
A burst data output can be interrupted with a precharge command. All DQ pins and DQS pins become High-Z
tHZP (= CL) after the precharge command.
Command
Command
DQS
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 2, 4, 8)
/CK
DQ
DQS
CK
/CK
DQ
CK
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4)
NOP
t0
t0
NOP
READ
t1
t1
tRPD = BL/2
NOP
READ
t2
t2
PRE/PALL
PRE/
PALL
t3
t3
CL = 3
t4
t4
out0 out1 out2 out3
tHZP
t5
t5
out0 out1
t6
NOP
t6
NOP
t7
t7
High-Z
High-Z
t8
t8
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