PBSS4440D T/R NXP Semiconductors, PBSS4440D T/R Datasheet

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PBSS4440D T/R

Manufacturer Part Number
PBSS4440D T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4440D T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
150 MHz
Dc Collector/base Gain Hfe Min
300 at 0.5 A at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Continuous Collector Current
4 A
Maximum Power Dissipation
2500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS4440D,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
SMD plastic package.
PNP complement: PBSS5440D.
Table 1.
[1]
[2]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS4440D
40 V NPN low V
Rev. 02 — 11 December 2009
Ultra low collector-emitter saturation voltage V
4 A continuous collector current capability I
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Device mounted on a ceramic Printed-Circuit Board (PCB), AL
Pulse test: t
Quick reference data
CEsat
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
CEsat
(BISS) transistor
Conditions
open base
t = 1 ms or limited by
T
I
C
j(max)
= 6 A; I
C
B
(DC)
= 600 mA
CEsat
2
O
3
, standard footprint.
[1]
[2]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
55
Max
40
4
15
75
Unit
V
A
A

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PBSS4440D T/R Summary of contents

Page 1

PBSS4440D 40 V NPN low V Rev. 02 — 11 December 2009 1. Product profile 1.1 General description NPN low V SMD plastic package. PNP complement: PBSS5440D. 1.2 Features Ultra low collector-emitter saturation voltage continuous collector current ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS4440D 4. Marking Table 4. Type number PBSS4440D 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol T stg amb [1] Device mounted on a ceramic PCB, AL [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

Page 5

... NXP Semiconductors th(j-a) duty cycle = (K/ 0.5 0.33 0.2 0.1 10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. −1 10 −5 −4 ...

Page 6

... NXP Semiconductors 7. Characteristics Table 7. Characteristics ° unless otherwise specified. amb Symbol Parameter I collector-base cut-off CBO current I collector-emitter CES cut-off current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter BEsat saturation voltage ...

Page 7

... NXP Semiconductors 1000 h FE 800 (1) 600 (2) 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 V CEsat (1) (V) (2) (3) −1 10 −2 10 −3 10 − ...

Page 8

... NXP Semiconductors 1.6 V BEsat (V) 1.2 (1) 0.8 (2) (3) 0.4 0 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 9. Base-emitter saturation voltage as a function of collector current; typical values (A) I (mA) = 400 0.4 0.8 1 °C ...

Page 9

... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition (1) V Fig 14. Test circuit for switching times PBSS4440D_2 Product data sheet (probe) oscilloscope 450 Ω −0 0 ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS4440D SOT457 [1] For further information and the availability of packing methods, see [2] T1: normal taping ...

Page 11

... Release date PBSS4440D_2 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 2 “Transient thermal impedance from junction to ambient as a function of pulse time; ...

Page 12

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 13

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Legal information ...

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