PBSS4440D T/R NXP Semiconductors, PBSS4440D T/R Datasheet - Page 9

• Manufacturer Part Number: PBSS4440D T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4440D T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 150 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4440D,115

NXP Semiconductors
8. Test information
PBSS4440D_2
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
(1) V
I
I
C
B
CC
= 10 V; I
t
oscilloscope
d
C
t
on
Rev. 02 — 11 December 2009
= 2 A; I
V
t
r
I
Bon
(probe)
450 Ω
= 0.1 A; I
R1
R2
Boff
R
B
= −0.1 A
V
BB
R
C
V
CC
40 V NPN low V
DUT
V
o
mlb826
I
Bon
(probe)
450 Ω
I
t
Boff
(100 %)
s
t
off
oscilloscope
PBSS4440D
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
t
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