PBSS4440D T/R NXP Semiconductors, PBSS4440D T/R Datasheet - Page 6

• Manufacturer Part Number: PBSS4440D T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4440D T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 150 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4440D,115

NXP Semiconductors
7. Characteristics
Table 7.
T
[1]
PBSS4440D_2
Product data sheet
Symbol
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
Conditions
V
V
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
V
f = 100 MHz
V
C
C
C
C
C
C
C
C
C
C
Boff
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 0.5 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 6 A; I
= 6 A; I
= 0.5 A; I
= 1 A; I
= 1 A; I
= 4 A; I
= −0.1 A
= 40 V; I
= 40 V; I
= 30 V; V
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
B
Rev. 02 — 11 December 2009
= 50 mA
= 200 mA
= 400 mA
= 600 mA
= 600 mA
= 50 mA
= 100 mA
= 400 mA
C
C
C
C
C
C
B
B
C
E
E
C
E
C
= 0 A
= 50 mA
= 50 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
BE
= 0 A
= 0 A; T
= i
= 2 A; I
= 0.1 A;
= 0 V
e
= 0 A; f = 1 MHz
Bon
j
= 150 °C
= 0.1 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
300
300
250
100
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40 V NPN low V
0.79
0.81
390
120
Typ
-
-
-
-
-
-
-
-
-
35
65
115
220
330
55
0.83
1.0
0.79
12
52
64
510
150
30
PBSS4440D
CEsat
© NXP B.V. 2009. All rights reserved.
Max
0.1
50
0.1
0.1
-
-
-
-
-
60
110
180
300
450
75
0.85
0.9
1
1.1
1.0
-
-
-
-
-
-
-
-
(BISS) transistor
Unit
μA
μA
μA
μA
mV
mV
mV
mV
mV
mΩ
V
V
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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