PBSS4440D T/R NXP Semiconductors, PBSS4440D T/R Datasheet - Page 8

• Manufacturer Part Number: PBSS4440D T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4440D T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 150 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4440D,115

NXP Semiconductors
PBSS4440D_2
Product data sheet
Fig 9.
Fig 11. Collector current as a function of
V
(A)
I
BEsat
(V)
C
(1) T
(2) T
(3) T
1.6
1.2
0.8
0.4
14
12
10
8
6
4
2
0
0
10
0
I
Base-emitter saturation voltage as a function
of collector current; typical values
T
collector-emitter voltage; typical values
−1
C
amb
amb
amb
amb
/I
B
= 20
= −55 °C
= 25 °C
= 100 °C
= 25 °C
1
0.4
10
0.8
(1)
(2)
(3)
10
I
2
B
(mA) = 400
1.2
10
3
360
320
280
240
200
160
120
80
40
1.6
10
006aaa280
006aaa344
V
I
4
CE
C
(mA)
(V)
Rev. 02 — 11 December 2009
10
2.0
5
Fig 10. Collector-emitter saturation resistance as a
Fig 12. Collector-emitter saturation resistance as a
R
R
CEsat
CEsat
(Ω)
(Ω)
10
10
(1) I
(2) I
(3) I
10
10
(1) T
(2) T
(3) T
10
10
10
10
10
10
−1
−2
−1
−2
1
1
3
2
10
3
2
10
T
function of collector current; typical values
I
function of collector current; typical values
−1
C
C
C
−1
C
amb
amb
amb
amb
/I
/I
/I
/I
B
B
B
B
= 100
= 50
= 10
= 20
= 25 °C
= 100 °C
= 25 °C
= −55 °C
(1)
(2)
(3)
1
1
40 V NPN low V
10
10
10
10
2
2
PBSS4440D
CEsat
10
10
3
3
(1)
(2)
(3)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
10
10
006aaa326
006aaa281
I
4
4
C
I
C
(mA)
(A)
10
10
5
5
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