PBSS4440D T/R NXP Semiconductors, PBSS4440D T/R Datasheet - Page 7

• Manufacturer Part Number: PBSS4440D T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4440D T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 150 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4440D,115

NXP Semiconductors
PBSS4440D_2
Product data sheet
Fig 5.
Fig 7.
V
CEsat
h
(V)
1000
10
10
10
FE
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
800
600
400
200
−1
−2
−3
0
1
10
10
V
DC current gain as a function of collector
current; typical values
I
Collector-emitter saturation voltage as a
function of collector current; typical values
−1
−1
C
CE
amb
amb
amb
amb
amb
amb
/I
B
= 2 V
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
1
1
10
10
(1)
(2)
(3)
10
10
2
2
(1)
(2)
(3)
10
10
3
3
10
10
006aaa274
006aaa276
I
I
4
4
C
C
(mA)
(mA)
Rev. 02 — 11 December 2009
10
10
5
5
Fig 6.
Fig 8.
V
V
CEsat
(V)
(V)
BE
(1) T
(2) T
(3) T
10
10
10
(1) I
(2) I
(3) I
1.6
1.2
0.8
0.4
−1
−2
−3
0
10
1
10
V
Base-emitter voltage as a function of collector
current; typical values
T
Collector-emitter saturation voltage as a
function of collector current; typical values
−1
−1
C
C
C
amb
amb
amb
amb
CE
/I
/I
/I
B
B
B
= 2 V
= 100
= 50
= 10
= −55 °C
= 25 °C
= 100 °C
= 25 °C
1
1
40 V NPN low V
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
PBSS4440D
10
CEsat
10
3
3
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
10
10
006aaa275
006aaa277
I
4
I
4
C
C
(mA)
(mA)
10
10
5
5
7 of 13