PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet - Page 5

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PBSS302PD T/R

Manufacturer Part Number
PBSS302PD T/R
Description
Transistors Bipolar - BJT PNP 40V 4A LOW SAT
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS302PD T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
110 MHz
Dc Collector/base Gain Hfe Min
200 at 0.5 A at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Continuous Collector Current
4 A
Maximum Power Dissipation
2500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS302PD,115
NXP Semiconductors
PBSS302PD_2
Product data sheet
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
1
3
2
1
1
10
3
2
1
10
FR4 PCB, mounting pad for collector 1 cm
FR4 PCB, mounting pad for collector 6 cm
5
duty cycle =
duty cycle =
5
0.05
0.02
0.01
0.05
0.02
0.01
0.5
0.2
0.1
0.5
0.2
0.1
1
0
1
0
0.75
0.33
0.75
0.33
10
10
4
4
10
10
3
3
2
2
10
10
Rev. 02 — 6 December 2007
2
2
10
10
1
1
1
1
40 V, 4 A PNP low V
10
10
PBSS302PD
CEsat
10
10
2
2
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
t
t
p
p
006aaa272
006aaa273
(s)
(s)
10
10
3
3
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