PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet - Page 5

• Manufacturer Part Number: PBSS302PD T/R
• Description: Transistors Bipolar - BJT PNP 40V 4A LOW SAT
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PD T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS302PD,115

NXP Semiconductors
PBSS302PD_2
Product data sheet
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
1
3
2
1
1
10
3
2
1
10
FR4 PCB, mounting pad for collector 1 cm
FR4 PCB, mounting pad for collector 6 cm
5
duty cycle =
duty cycle =
5
0.05
0.02
0.01
0.05
0.02
0.01
0.5
0.2
0.1
0.5
0.2
0.1
1
0
1
0
0.75
0.33
0.75
0.33
10
10
4
4
10
10
3
3
2
2
10
10
Rev. 02 — 6 December 2007
2
2
10
10
1
1
1
1
40 V, 4 A PNP low V
10
10
PBSS302PD
CEsat
10
10
2
2
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
t
t
p
p
006aaa272
006aaa273
(s)
(s)
10
10
3
3
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