MT48H4M16LFB4-10 Micron Technology Inc, MT48H4M16LFB4-10 Datasheet - Page 36

IC SDRAM 64MBIT 100MHZ 54VFBGA

MT48H4M16LFB4-10

Manufacturer Part Number
MT48H4M16LFB4-10
Description
IC SDRAM 64MBIT 100MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48H4M16LFB4-10

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
64M (4M x 16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
4Mx16
Density
64Mb
Address Bus
14b
Access Time (max)
8/7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48H4M16LFB4-10
Manufacturer:
MICRON
Quantity:
4 000
Part Number:
MT48H4M16LFB4-10
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10 IT
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10 IT TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10 TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10:H
Manufacturer:
MICRON
Quantity:
4 000
NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. Violating refresh requirements during power-down may result in a loss of data.
1. CAS latency indicated in parentheses.
SYMBOL
t
t
CK (3)
CK (2)
t
t
t
t
AH
CH
AS
CL
DQML, DQMU
1
COMMAND
A0-A9, A11
Precharge all
BA0, BA1
active banks
MIN
2.5
9.6
CKE
1
3
3
8
CLK
A10
DQ
-8
High-Z
t CMS
t CKS
t AS
MAX
SINGLE BANK
PRECHARGE
ALL BANKS
100
100
BANK(S)
T0
t CMH
t CKH
t AH
MIN
2.5
9.6
Two clock cycles
12
1
3
3
All banks idle, enter
power-down mode
t CK
-10
T1
NOP
Figure 32: Power-Down Mode
MAX
100
100
t CKS
t CL
UNITS
ns
ns
ns
ns
ns
ns
T2
NOP
Input buffers gated off while in
power-down mode
t CH
36
SYMBOL
Exit power-down mode
(
(
(
(
(
(
(
)
(
)
(
)
(
)
(
)
)
t
t
(
)
)
)
)
)
(
t
t
(
)
(
(
(
(
(
(
)
)
t
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(
)
(
)
(
)
(
)
(
)
)
CMH
MRD
(
)
)
)
)
)
CKH
CMS
(
)
(
CKS
RFC
t
)
)
RP
MIN
2.5
2.5
1
80
19
1
1
2
t CKS
-8
Tn + 1
NOP
MAX
All banks idle
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
MIN
100
2.5
2.5
20
Tn + 2
1
1
2
ACTIVE
64Mb: x16
ROW
ROW
BANK
DON’T CARE
-10
MAX
UNITS
t
ns
ns
ns
ns
ns
ns
CK

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