MT48H4M16LFB4-10 Micron Technology Inc, MT48H4M16LFB4-10 Datasheet - Page 43

• Manufacturer Part Number: MT48H4M16LFB4-10
• Description: IC SDRAM 64MBIT 100MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. A9 and A11 = “Don’t Care.”
3. PRECHARGE command not allowed or
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
CKS
t
AH
CH
AS
CL
1
DQMU, DQML
MIN MAX
2.5
9.6
2.5
COMMAND
A0-A9, A11
1
3
3
8
1
BA0, BA1
-8
CLK
CKE
A10
DQ
100
100
t CKS
t CMS
7
8
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
Figure 39: Single READ – With Auto Precharge
t CMH
t CKH
t AH
t AH
t AH
MIN MAX
2.5
9.6
2.5
12
t RCD
t RAS
t RC
1
3
3
1
t CK
-10
T1
NOP
100
100
7
8
t CL
t
RAS would be violated.
UNITS
T2
NOP 3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t CH
T3
NOP 3
ENABLE AUTO PRECHARGE
t CMS
43
COLUMN m 2
T4
BANK
READ
t CMH
CAS Latency
SYMBOL
t
t
t
HZ (3)
HZ (2)
t
t
t
CMH
t
CMS
t
RCD
RAS
t
t
OH
RC
RP
LZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
NOP
t AC
t RP
MIN
2.5
48
80
19
19
D
T6
1
1
3
OUT
NOP
t OH
m
t HZ
-8
120,000
MAX
ACTIVE
T7
BANK
ROW
ROW
7
8
MOBILE SDRAM
1
©2003 Micron Technology, Inc. All rights reserved.
MIN
DON’T CARE
UNDEFINED
2.5
T8
50
66
20
20
NOP
1
1
3
64Mb: x16
-10
120,000
MAX
7
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns