MT48H4M16LFB4-10 Micron Technology Inc, MT48H4M16LFB4-10 Datasheet - Page 53

IC SDRAM 64MBIT 100MHZ 54VFBGA

MT48H4M16LFB4-10

Manufacturer Part Number
MT48H4M16LFB4-10
Description
IC SDRAM 64MBIT 100MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48H4M16LFB4-10

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
64M (4M x 16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
4Mx16
Density
64Mb
Address Bus
14b
Access Time (max)
8/7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
50mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48H4M16LFB4-10
Manufacturer:
MICRON
Quantity:
4 000
Part Number:
MT48H4M16LFB4-10
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10 IT
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10 IT TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10 TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H4M16LFB4-10:H
Manufacturer:
MICRON
Quantity:
4 000
NOTE:
NOTE:
pdf: 09005aef80a63953, source: 09005aef808a7edc
Y25L_64Mb_2.fm - Rev. E 11/04 EN
1. For this example, the burst length = 4.
2. A9 and A11 = “Don’t Care.”
1. CAS latency indicated in parentheses.
SYMBOL
t
t
t
t
AC (3)
AC (2)
CK (3)
CK (2)
t
t
t
t
CKH
t
t
CKS
DQMU, DQML
AH
CH
AS
CL
COMMAND
A0-A9, A11
BA0, BA1
1
CLK
CKE
A10
DQ
MIN
2.5
9.6
2.5
1
3
3
8
1
t CMS
t CKS
t AS
t AS
t AS
-8
ACTIVE
T0
ROW
ROW
BANK
MAX
100
100
t CKH
t CMH
t AH
t AH
t AH
7
8
t RCD
t CK
MIN
2.5
9.6
2.5
12
1
3
3
1
T1
NOP
-10
Figure 49: WRITE – DQM Operation
MAX
100
100
DISABLE AUTO PRECHARGE
ENABLE AUTO PRECHARGE
7
8
t CMS
t CL
COLUMN m 2
t DS
UNITS
WRITE
T2
BANK
D
IN
t CMH
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t DH
m
t CH
T3
NOP
53
SYMBOL
t
t DS
t
WR (m)
WR (a)
t
D
t
t
t
CMH
t
CMS
RCD
T4
t
RAS
t
IN
t
NOP
DH
DS
RC
RP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
m + 2
t DH
1 CLK
t DS
MIN
+7ns
2.5
2.5
48
80
19
19
15
D
1
1
T5
IN
NOP
m + 3
t DH
-8
1
120,000
MAX
MOBILE SDRAM
NOP
T6
©2003 Micron Technology, Inc. All rights reserved.
1 CLK
+5ns
MIN
100
2.5
2.5
50
20
20
15
1
1
64Mb: x16
-10
NOP
DON’T CARE
120,000
T7
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns

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