MT48H8M32LFB5-10 IT Micron Technology Inc, MT48H8M32LFB5-10 IT Datasheet - Page 44

• Manufacturer Part Number: MT48H8M32LFB5-10 IT
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
1. Each AUTO REFRESH command performs a refresh cycle. Back-to-back commands are not required.
See Table 14, Electrical Characteristics and Recommended AC Operating Conditions, on page 35.
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
CKE
A10
CLK
DQ
High-Z
Precharge all
t CKS
active banks
t CMS
t
SINGLE BANK
AS
PRECHARGE
ALL BANKS
BANK(S)
T0
t CKH
t CMH
t
AH
t CK
Figure 35: Self Refresh Mode
t RP
T1
NOP
t CH
Enter self refresh mode
t CKS
t CL
REFRESH
CLK stable prior to exiting
AUTO
T2
self refresh mode
> t RAS
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44
(Restart refresh time base)
Exit self refresh mode
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Tn + 1
t XSR
NOP
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To + 1
MOBILE SDRAM
To + 2
REFRESH
AUTO
©2003 Micron Technology, Inc. All rights reserved.
DON’T CARE
256Mb: x32
PRELIMINARY