MT48H8M32LFB5-10 IT Micron Technology Inc, MT48H8M32LFB5-10 IT Datasheet - Page 57

• Manufacturer Part Number: MT48H8M32LFB5-10 IT
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
COMMAND
A0-A9, A11
1. A9 and A11 = “Don’t Care.”
2.
3. Page left open; no
BA0, BA1
DQM 0-3
t
See Table 14, Electrical Characteristics and Recommended AC Operating Conditions, on page 35.
WR must be satisfied prior to PRECHARGE command.
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t RCD
t
RP.
t CL
T1
NOP
t CH
Figure 48: Write – Full-page Burst
t CMS
t CK
t DS
COLUMN m 1
T2
WRITE
BANK
D
IN
t CMH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
57
t DS
D
IN
T4
NOP
512 locations within same row
m + 2
t DH
Full page completed
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DS
D
IN
T5
NOP
m + 3
t DH
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1
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t DS
Tn + 1
D
IN
NOP
MOBILE SDRAM
m - 1
t DH
Full-page burst does
not self-terminate. Can
use BURST TERMINATE
command to stop.
©2003 Micron Technology, Inc. All rights reserved.
256Mb: x32
BURST TERM
Tn + 2
PRELIMINARY
DON’T CARE
2, 3
Tn + 3
NOP