MT48H8M32LFB5-10 IT Micron Technology Inc, MT48H8M32LFB5-10 IT Datasheet - Page 52

• Manufacturer Part Number: MT48H8M32LFB5-10 IT
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
1. For this example, the burst length = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <DIN m + 3> and the PRECHARGE command, regardless of frequency.
3. A9 and A11 = “Don’t Care.”
DQMU, DQML
COMMAND
A0-A9, A11
See Table 14, Electrical Characteristics and Recommended AC Operating Conditions, on page 35.
BA0, BA1
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
T1
NOP
Figure 43: Write – Without Auto Precharge
DISABLE AUTO PRECHARGE
t CMS
t CL
t DS
COLUMN m 3
WRITE
T2
BANK
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
52
t DS
D
IN
T5
NOP
m + 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR
NOP
T6
2
SINGLE BANK
PRECHARGE
ALL BANKS
BANK
T7
1
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
t RP
256Mb: x32
NOP
T8
PRELIMINARY
ACTIVE
ROW
ROW
BANK
T9
DON’T CARE