MT48H8M32LFB5-10 IT Micron Technology Inc, MT48H8M32LFB5-10 IT Datasheet - Page 47

• Manufacturer Part Number: MT48H8M32LFB5-10 IT
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10 IT

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE:
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. A9 and A11 = “Don’t Care.”
3. PRECHARGE command not allowed or tRAS would be violated.
See Table 14, Electrical Characteristics and Recommended AC Operating Conditions, on page 35.
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
ROW
ROW
BANK
T0
t CMH
t CKH
t AH
t AH
t AH
Figure 38: Single Read – Without Auto Precharge
t RCD
t RAS
t RC
t CK
T1
NOP
DISABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m
BANK
T2
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
3
t AC
47
T4
D
NOP
OUT
t OH
t HZ
3
m
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SINGLE BANKS
PRECHARGE
ALL BANKS
BANK(S)
T5
t RP
T6
NOP
MOBILE SDRAM
ACTIVE
ROW
T7
ROW
BANK
©2003 Micron Technology, Inc. All rights reserved.
1
256Mb: x32
PRELIMINARY
T8
NOP
DON’T CARE
UNDEFINED