KA5H0365RTU Fairchild Semiconductor, KA5H0365RTU Datasheet - Page 3

• Manufacturer Part Number: KA5H0365RTU
• Description: IC SWIT PWM CM OVP UVLO HV TO220
• Manufacturer: Fairchild Semiconductor

Specifications of KA5H0365RTU

• Frequency Range: 90 ~ 110kHz
• Voltage - Input: 9 ~ 30 V
• Voltage - Output: 650V
• Power (watts): 75W
• Operating Temperature: 25°C ~ 160°C
• Package / Case: TO-220-4 Full Pack
• Power Switch Family: KA5H0365R
• Input Voltage: -0.3 to 8.1V
• Power Switch On Resistance: 3.6Ohm
• Output Current: 3A
• Number Of Outputs: Single
• Mounting: Through Hole
• Supply Current: 7mA
• Package Type: TO-220F
• Operating Temperature (min): -25C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Commercial
• Pin Count: 4 +Tab
• Power Dissipation: 75W
• Output Voltage: 4.8 V to 5.2 V
• Switching Frequency: 100 KHz
• Operating Temperature Range: - 25 C to + 85 C
• Mounting Style: Through Hole
• Duty Cycle (max): 72 %
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Note:
1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%
2.
Parameter
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
S
=
--- -
R
1
(Note)
(Note)
(Note)
(Note)
R
R
Symbol
BV
BV
td(on)
td(off)
td(on)
td(off)
DS(ON)
DS(ON)
Coss
Coss
I
I
Crss
Crss
Ciss
Qgd
Ciss
Qgd
Qgs
Qgs
DSS
DSS
gfs
Qg
gfs
Qg
tr
tr
DSS
tf
DSS
tf
V
V
V
V
V
V
V
f=1MHz
V
(MOSFET switching
time is essentially
independent of
operating temperature)
V
V
switching time is essentially
independent of
operating temperature)
V
V
V
V
V
V
V
f=1MHz
V
(MOSFET switching
time is essentially
independent of
operating temperature)
V
V
switching time is
essentially independent of
operating temperature)
GS
DS
DS
GS
GS
DS
GS
DD
GS
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DS
=Max. Rating, V
=0.8Max. Rating,
=50V, I
=0.5BV
=Max. Rating, V
=0.8Max. Rating,
=50V, I
=0.5BV
=0V, I
=0V, T
=10V, I
=0V, V
=0.5BV
=10V, I
=0V, I
=0V, T
=10V, I
=0V, V
=0.5BV
=10V, I
Condition
D
D
C
C
DS
DS
D
D
D
D
D
D
DSS
DSS
=50µA
DSS
=50µA
DSS
=125°C
=125°C
=0.5A
=0.5A
=0.5A
=1.0A,
=0.5A
=1.0A,
=25V,
=25V,
, I
, I
(MOSFET
(MOSFET
D
D
=1.0A
=1.0A
GS
GS
=0V
=0V
Min.
650
800
2.0
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
13.3
75.6
24.9
12.1
720
150
100
150
779
150
3.6
7.3
4.0
2.5
7.2
40
40
42
40
95
60
-
-
-
-
-
-
-
-
-
KA5X03XX-SERIES
Max.
1000
200
250
4.5
5.0
50
34
34
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
nC
nC
µA
µA
pF
nS
µA
µA
pF
nS
Ω
V
S
V
Ω
S
3