BSP76 E6327 Infineon Technologies, BSP76 E6327 Datasheet - Page 2

• Manufacturer Part Number: BSP76 E6327
• Description: MOSFET 42V 1.4A N-CHAN SOT223
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BSP76 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.8A
• Current - Peak Output: 7.5A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• On Resistance (max): 0.19 Ohms
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Maximum Power Dissipation: 3800 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP76-E6327; BSP76-E6327INTR; BSP76-E6327INTR; BSP76E6327INTR; BSP76E6327NT; BSP76E6327NTINTR; BSP76E6327NTINTR; BSP76E6327T; BSP76E6327T; BSP76E6327TINTR; BSP76E6327TINTR; BSP76E6327XT; SP000011146; SP000292889; SP000379611

Datasheet
Thermal resistance
junction - ambient:
@ min. footprint
@ 6 cm
junction-soldering point:
Maximum Ratings at T
Parameter
Drain source voltage
Supply voltage for full short circuit protection
Continuous input voltage
Continuous input current
-0.2V £ V
V
Operating temperature
Storage temperature
Power dissipation
T
Unclamped single pulse inductive energy
Load dump protection V
V
R
Electrostatic discharge voltage
according to Jedec norm
EIA/JESD22-A114-B, Section 4
1 For input voltages beyond these limits I
2 not subject to production test, specified by design
3 V
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain
5 not subject to production test, calculated by R
connection. PCB mounted vertical without blown air.
C
IN
IN
L
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
= 9 W, V
= 85 °C
< -0.2V or V
= 0 and 10 V, t
2
cooling area
IN
A
£ 10V
= 13.5 V
IN
5)
> 10V
d
= 400 ms, R
4)
j
LoadDump
2)
1)
= 25°C, unless otherwise specified
2)
I
(Human Body Model)
2)3)
= 2 W,
IN
has to be limited.
= V
thJA and R ds(on)
A
2)
+ V
2
S
R
R
Symbol
V
V
V
I
T
T
P
E
V
V
IN
j
stg
DS
bb(SC)
IN
tot
AS
LD
ESD
thJA
thJS
Smart Low Side Power Switch
self limited
-55 ... +150
-0.2
-40 ...+150
| I
Value
IN
125
150
3.8
72
2)
17
42
42
50
2
| £ 2
... +10
Rev. 1.3, 2008-04-14
HITFET BSP 76
K/W
K/W
Unit
V
mA
°C
W
mJ
V
kV