BSP76 E6327 Infineon Technologies, BSP76 E6327 Datasheet - Page 6

• Manufacturer Part Number: BSP76 E6327
• Description: MOSFET 42V 1.4A N-CHAN SOT223
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BSP76 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.8A
• Current - Peak Output: 7.5A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• On Resistance (max): 0.19 Ohms
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Maximum Power Dissipation: 3800 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP76-E6327; BSP76-E6327INTR; BSP76-E6327INTR; BSP76E6327INTR; BSP76E6327NT; BSP76E6327NTINTR; BSP76E6327NTINTR; BSP76E6327T; BSP76E6327T; BSP76E6327TINTR; BSP76E6327TINTR; BSP76E6327XT; SP000011146; SP000292889; SP000379611

Datasheet
1 Maximum allowable power dissipation
P
P
3 On-state resistance
R
tot
tot
ON
mW
500
400
350
300
250
200
150
100
= f(T
= f(T
W
= f(T
10
50
8
7
6
5
4
3
2
1
0
0
-75
-50
6cm2
max.
S
A
-50
j
-25
); I
) resp.
) @ R
D
-25
0
= 1.4A; V
thJA
25
0
=72 K/W
25
50
IN
50
75
=5V
100 125 °C
75
100 °C
T
T
S
j
max.
typ.
;T
150
175
A
6
2 On-state resistance
R
4 Typ. input threshold voltage
V
IN(th)
ON
mW
500
400
350
300
250
200
150
100
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= f(T
V
50
0
2
1
0
-50
-50
= f(T
j
-25
); I
-25
Smart Low Side Power Switch
j
); I
D
=1.4A; V
0
D
0
= 0.15 mA; V
25
25
50
IN
50
=10V
75
Rev. 1.3, 2008-04-14
HITFET BSP 76
75
100 125 °C
DS
100
= 12V
°C
T
T
j
j
max.
typ.
175
150