BTS3160D Infineon Technologies, BTS3160D Datasheet - Page 3

• Manufacturer Part Number: BTS3160D
• Description: IC SWITCH PWR LOSIDE TO252-5
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BTS3160D

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 8 mOhm
• Current - Output / Channel: 7.8A
• Current - Peak Output: 70A
• Voltage - Supply: 6 V ~ 45 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTS3160D; BTS3160DTR; SP000106963; SP000305175

Smart Low Side Power Switch
HITFET - BTS3160D
1
The BTS3160D is a one channel low-side power switch in
PG-TO-252-5-13 package providing embedded protective functions.
The power transistor is realized by a N-channel vertical power
MOSFET.
The device is controlled by a chip in Smart Power Technology.
Features
•
•
•
•
•
•
•
Table 1
Type
BTS3160D
Datasheet
Drain voltage
Supply voltage
On-State resistance at 25°C
Nominal load current
Maximum inrush current
Leakage current MOSFET at V
Supply current in off mode at V
Clamping Energy
Logic level input compatible to 3.3 V or 5V micro controllers
Supply by V
Very low over all leakage current
Providing digital fault information
Electrostatic discharge protection (ESD)
Green Product (RoHS compliant)
AEC Qualified
Overview
Basic Electrical Data
bb
line, down to 6 V
bb
bb
= 13.5 V, T
= 13.5 V, T
J
J
= 85 °C
= 85 °C
3
Package
PG-TO-252-5-13
V
V
R
I
I
I
I
E
Dnom
DSC
DSS
SSS
D
S
DS(ON,max)
AS
40 V
6.0 … 45 V
10 mΩ
7.8 A
70 A
2 µA
4 µA
0.3 J
PG-TO-252-5-13
Rev. 1.1, 2008-02-28
BTS3160D