BTS3256D Infineon Technologies, BTS3256D Datasheet - Page 14

• Manufacturer Part Number: BTS3256D
• Description: IC SWITCH SMART LOWSIDE TO252-5
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BTS3256D

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 10 mOhm
• Current - Output / Channel: 7.5A
• Current - Peak Output: 42A
• Voltage - Supply: 5.5 V ~ 30 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6.2
A high signal on the input pin causes the power MOSFET to switch on with a dedicated slope which is optimized
for low EMC emission.
Figure 10
In order to minimize the emission during switching, the BTS 3256D limits the slopes during turn on and off at slow
slew rate settings. For best performance of the edge shaping, the supply pin V
voltage. For supply voltages other than nominal battery, the edge shaping can differ from the Values in the
electrical characteristics table below.
6.3
When switching off inductive loads with low-side switches, the Drain Source voltage V
potential, because the inductance intends to continue driving the current.
The BTS 3256D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage V
level. See
Figure 11
Datasheet
90 %
80 %
20 %
10 %
High
Low
V
V
bb
IN
D
Figure 11
|dv/dt|shaping
Output Timings and Slopes
Definition of Power Output Timing for Resistive Load
Inductive Output Clamp
Output Clamp
t
ond
for more details.
Figure 10
t
on
shows the timing definition.
|dv/dt|on
14
|dv/dt|off
t
offd
t
off
Smart Low Side Power Switch
|dv/dt| shaping
Drain
GND
S
should be connected to battery
|dv/dt| shaping
HITFET - BTS 3256D
output_clamp_curcuit . emf
t
t
D
Rev. 1.0, 2009-05-05
rises above battery
OutputTiming.em
Power Stage
D
at a certain