BTS740S2 Infineon Technologies, BTS740S2 Datasheet - Page 3

• Manufacturer Part Number: BTS740S2
• Description: IC SWITCH POWER HISIDE DSO-20
• Manufacturer: Infineon Technologies
• Series: PROFET®r
• Type: High Sider

Specifications of BTS740S2

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 27 mOhm
• Current - Output / Channel: 5.5A
• Current - Peak Output: 50A
• Voltage - Supply: 5 V ~ 34 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DSO-20
• Power Load Switch Type: High Side
• Input Voltage: 34V
• On State Resistance: 27mohm
• Thermal Protection: Yes
• Power Dissipation Pd: 3.8W
• No. Of Outputs: 2
• Internal Switch: Yes
• Current Limit: 50A
• Switch Type: High Side
• Power Switch Family: BTS740S2
• Power Switch On Resistance: 27mOhm
• Output Current: 4.9A
• Mounting: Surface Mount
• Supply Current: 2.4mA
• Package Type: DSO
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 20
• Power Dissipation: 3.8W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: BTS740S2; BTS740S2TR; SP000011312; SP000313545

Maximum Ratings
Parameter
Supply voltage (overvoltage protection see page 5)
Supply voltage for full short circuit protection
T
Load current (Short-circuit current, see page 5)
Load dump protection
Operating temperature range
Storage temperature range
Power dissipation (DC)
Maximal switchable inductance, single pulse
Electrostatic discharge capability (ESD)
Current through input pin (DC)
Current through status pin (DC)
Current through current sense pin (DC)
Thermal Characteristics
Parameter and Conditions
Thermal resistance
nput voltage (DC)
)
)
)
)
Data Sheet
R=1.5kΩ; C=100pF
R
each channel loaded with R
(all channels active)
V
I
I
see diagrams on page 10
(Human Body Model)
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
see internal circuit diagram page 9
junction - soldering point
junction - ambient
j,start
L
L
bb
I
2
= 5.5 A, E
= 8.5 A, E
Supply voltages higher than V
resistor for the GND connection is recommended.
R
V
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection PCB is vertical without blown air See page 15
)
Load dump
I
= 2 Ω, t
= 12V, T
= -40 ...+150°C
= internal resistance of the load dump test pulse generator
d
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
AS
AS
j,start
= 200 ms; IN = low or high,
= 370 mJ, 0 Ω
= 790 mJ, 0 Ω
= 150°C
4)
1
)
4)
V
at T
LoadDump
4)
4),5)
,
bb(AZ)
j
L
out to all other pins shorted:
= 25°C unless otherwise specified
= 7.0 Ω,
one channel active:
all channels active:
require an external current limit for the GND and status pins (a 150Ω
= V
two parallel channels:
each channel: R
A
+ V
s
, V
one channel:
A
T
T
3
= 13.5 V
a
a
= 25°C:
= 85°C:
ST, IS:
2
R
(one layer, 70µm thick) copper area for V bb
Symbol
IN:
thjs
thja
V
V
I
V
T
T
P
Z
V
V
I
I
I
Symbol
L
IN
ST
IS
j
stg
L
bb
bb
Load dump
tot
ESD
IN
Smart High-Side Power Switch
min
3
--
--
--
)
Values
-40 ...+150
-55 ...+150
self-limited
typ
Values
-10 ... +16
40
33
--
V1.0, 2007-05-13
±2.0
±5.0
Max
±14
3.8
2.0
1.0
4.0
8.0
BTS740S2
43
34
60
18
16
12
--
--
Unit
Unit
K/W
mH
mA
kV
°C
W
V
V
A
V
V