BTS5434G Infineon Technologies, BTS5434G Datasheet
BTS5434G
Specifications of BTS5434G
BTS5434GT
BTS5434GXT
SP000014710
SP000275955
Available stocks
Related parts for BTS5434G
BTS5434G Summary of contents
Page 1
Smart High-Side Power Switch PROFET Four Channels, 60 mΩ Automotive Power ...
Page 2
Table of Contents Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 3
Smart High-Side Power Switch PROFET Product Summary The BTS 5434G is a four channel high-side power switch in P-DSO-28-19 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device ...
Page 4
Protective Functions • Reverse battery protection without external components • Short circuit protection • Overload protection • Multi-step current limitation • Thermal shutdown with restart • Thermal restart at reduced current limitation • Over voltage protection without external resistor • ...
Page 5
Overview The BTS 5434G is a four channel high-side power switch (four times 60 mΩ) in P-DSO-28-19 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 to IS4 provide a sophisticated diagnostic feedback signal including current sense function ...
Page 6
Terms Following figure shows all terms used in this data sheet IN1 I V IN2 IN1 I V IS1 IN2 I V IS2 IS1 I V SENA IS2 V I SENA IN3 I V IN4 IN3 ...
Page 7
Pin Configuration 2.1 Pin Assignment BTS 5434G VBB GNDA SENA GNDB SENB VBB Figure 3 Pin Configuration P-DSO-28-19 2.2 Pin Definitions and Functions Pin Symbol 3 IN1 6 IN2 9 IN3 12 IN4 4 IS1 5 IS2 10 IS3 ...
Page 8
Pin Symbol 7 SENA 13 SENB 25, 26, 27 OUT1 22, 23, 24 OUT2 19, 20, 21 OUT3 16, 17, 18 OUT4 2 GNDA 8 GNDB 1, 14, 15, VBB 28 Data Sheet Smart High-Side Power Switch I/O Function OD ...
Page 9
Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may affect device reliability or may cause permanent damage to the device. Unless otherwise specified ° Pos. Parameter Supply Voltage 3.1.1 Supply voltage 3.1.2 ...
Page 10
Unless otherwise specified ° Pos. Parameter Temperatures 3.1.13 Junction Temperature 3.1.14 Dynamic temperature increase while switching 3.1.15 Storage Temperature ESD Susceptibility 3.1.16 ESD susceptibility HBM 1) R and L describe the complete circuit impedance including line, ...
Page 11
Block Description and Electrical Characteristics 4.1 Power Stages The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump. 4.1.1 Output On-State Resistance R The on-state resistance T temperature . Figure 4 j The behavior ...
Page 12
A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission OUT 90% 70% 30% 10% Figure 6 Switching a Load ...
Page 13
V OUT OUT(CL Figure 8 Switching an Inductance Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS 5434G. This energy can be calculated with following equation: ( ...
Page 14
Electrical Characteristics Unless otherwise specified: = -40 °C to +150 °C, typical values Pos. Parameter General 4.1.1 Operating voltage 4.1.2 Operating current one channel active all channels active 4.1.3 ...
Page 15
Unless otherwise specified: = -40 °C to +150 °C, typical values Pos. Parameter Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient one channel active all channels active Input ...
Page 16
Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed ...
Page 17
Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following formula for estimation of total power dissipation P diss(rev) The reverse current through ...
Page 18
Electrical Characteristics Unless otherwise specified: = -40 °C to +150 °C , typical values Pos. Parameter Over Load Protection 4.2.1 Load current limitation 4.2.2 Repetitive short circuit current limitation ...
Page 19
Diagnosis For diagnosis purpose, the BTS 5434G provides an Enhanced IntelliSense signal at pins IS1 to IS4. This means in detail, the current sense signal k load current (ratio = ILIS occurs. In case of open load in OFF-state, ...
Page 20
Table 1 Truth Table Operation Mode Normal Operation (ON) Current Limitation Short Circuit to GND Over Temperature Short Circuit Open Load L = Low Level High Level high impedance, potential depends on leakage ...
Page 21
In case of over current as well as over temperature, the current sense signal is switched off result, one threshold is enough to distinguish between normal and faulty operation. Open load and over load can be differentiated by ...
Page 22
For open load diagnosis in off state an external output pull-up resistor ( recommended. For calculation of the pull-up resistor, just the external leakage current I and the open load threshold voltage leakage I defines the leakage current in the ...
Page 23
Electrical Characteristics Unless otherwise specified: = -40 °C to +150 ° typical values Pos. Parameter Open Load at OFF-State 4.3.1 Open load detection threshold ...
Page 24
Unless otherwise specified: = -40 °C to +150 ° typical values Pos. Parameter 4.3.9 Current sense leakage, while diagnosis disabled 4.3.10 Current sense settling static ...
Page 25
Package Outlines BTS 5434G P-DSO-28-19 (Plastic Dual Small Outline Package) 1.27 +0. 18.1 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of ...
Page 26
Revision History Version Date Changes V1.0 04-01-23 initial version Data Sheet Smart High-Side Power Switch 26 BTS 5434G Revision History 2004-01-23 ...
Page 27
... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
Page 28
... Published by Infineon Technologies AG ...