BTS5231GS Infineon Technologies, BTS5231GS Datasheet - Page 17

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BTS5231GS

Manufacturer Part Number
BTS5231GS
Description
IC HIGH SIDE PWR SWITCH PDSO-14
Manufacturer
Infineon Technologies
Series
PROFET®r
Type
High Sider
Datasheet

Specifications of BTS5231GS

Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
140 mOhm
Current - Output / Channel
1.8A
Current - Peak Output
10A
Voltage - Supply
4.5 V ~ 28 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
DSO-14
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BTS5231GST
SP000203741

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTS5231GS
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
4.2.5
V
typical values:
Pos.
Over Load Protection
4.2.1
4.2.2
4.2.3
4.2.4
4.2.5
Reverse Battery
4.2.6
4.2.7
Ground Circuit
4.2.8
Over Voltage
4.2.9
Loss of GND
4.2.10 Output current while
1) Please note, that an external forced V
2) Not subject to production test, specified by design
3) No connection at these pins
Data Sheet
bb
= 9 V to 16 V,
Parameter
Load current limitation
Repetitive short circuit
current limitation
Initial short circuit shut
down time
Thermal shut down
temperature
Thermal hysteresis
Drain-Source diode
voltage (
Reverse current
through GND pin
Integrated Resistor in
GND line
Overvoltage
protection
GND disconnected
Electrical Characteristics
V
bb
V
OUT
T
= 13.5 V,
j
= -40 °C to +150 °C (unless otherwise specified)
>
V
bb
)
T
j
= 25 °C
Symbol
I
I
t
T
-V
-
R
V
I
OFF(SC)
L(LIM)
L(SCr)
I
L(GND)
DS
j(SC)
T
GND
bb(AZ)
GND
DS(rev)
j
must not exceed V
min.
150
115
200
1.6
17
41
8
5
Limit Values
typ. max.
170
220
bb
0.5
10
65
47
3
2)
Smart High-Side Power Switch
+ |V
OUT(CL)
700 mV
350 Ω
350 Ω
16
10
53
6
2
|
A
A
ms
°C
K
mA
V
mA
Unit
Protection Functions
Test Conditions
V
V
V
T
T
R
I
V
T
V
T
T
I
I
I
I
L
bb
IN
SEN
IS
j
jStart
j
j
j
DS
DS
DS
thja
bb
bb
=
= -1.6 A,
= 150 °C
< 150 °C
= 150 °C
V1.0, 2005-12-19
= 0,
= 0,
BTS 5231GS
= 2 mA
= -13.5 V,
= -13.5 V
= 7 V
= 14 V
= 28 V
T
= 40 K/W
= 0,
= 25 °C
j(SC)
2) 3)
I
GND
2)
1) 2)
= 0
2)
2)

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