BTS5441G Infineon Technologies, BTS5441G Datasheet
BTS5441G
Specifications of BTS5441G
SP000014644
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BTS5441G Summary of contents
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Smart High-Side Power Switch PROFET Four Channels, 25 mΩ Automotive Power ...
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Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Smart High-Side Power Switch PROFET Product Summary The BTS 5441G is a four channel high-side power switch in P-DSO-28-19 package providing embedded protective functions including ReverSave The power transistor is built by a N-channel vertical power MOSFET with charge pump. ...
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Protective Functions ™ • ReverSave , channels switch on in case of reverse polarity • Reverse battery protection without external components • Short circuit protection • Over-load protection • Multi-step current limitation • Thermal shutdown with restart • Thermal restart ...
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Overview The BTS 5441G is a four channel high-side power switch (four times 25 mΩ) in P-DSO-28-19 package providing embedded protective functions including ReverSave. ReverSave is a protection feature that causes the power transistors to switch on in case ...
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Terms Following figure shows all terms used in this data sheet IN1 I V IN2 IN1 I V IS1 IN2 I V IS2 IS1 I V SENA IS2 V I SENA IN3 I V IN4 IN3 ...
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Pin Configuration 2.1 Pin Assignment BTS 5441G VBB GNDA SENA GNDB SENB VBB Figure 3 Pin Configuration P-DSO-28-19 2.2 Pin Definitions and Functions Pin Symbol 3 IN1 6 IN2 9 IN3 12 IN4 4 IS1 5 IS2 10 IS3 ...
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Pin Symbol 13 SENB 25, 26, 27 OUT1 22, 23, 24 OUT2 19, 20, 21 OUT3 16, 17, 18 OUT4 2 GNDA 8 GNDB 1, 14, 15, VBB 28 Data Sheet Smart High-Side Power Switch I/O Function I Sense Enable ...
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Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability °C (unless otherwise specified Pos. ...
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T j Pos. Parameter Temperatures 3.1.13 Junction temperature 3.1.14 Dynamic temperature increase while switching 3.1.15 Storage temperature ESD Susceptibility 3.1.16 ESD susceptibility HBM 1) R and L describe the complete circuit impedance including line, ...
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Block Description and Electrical Characteristics 4.1 Power Stages The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump. 4.1.1 Output On-State Resistance R The on-state resistance T temperature . Figure 4 j The on-state ...
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A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission OUT 90% 70% 30% 10% Figure 6 Switching a Load ...
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V OUT OUT(CL Figure 8 Switching an Inductance Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS 5441G. This energy can be calculated with following equation ...
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Electrical Characteristics = -40 °C to +150 °C (unless otherwise specified typical values Pos. Parameter General 4.1.1 Operating voltage 4.1.2 Operating current one channel ...
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typical values Pos. Parameter Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient one channel ...
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Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed ...
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Reverse Polarity Protection The BTS 5441G is ReverSave. This means, no additional components are required to protect the device in reverse polarity mode. In case of reverse polarity, the device switches on the power transistor to almost forward condition, ...
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Loss of Ground Protection In case of complete loss of the device ground connections, but connected load ground, the BTS 5441G securely changes to or keeps in off state. Data Sheet Smart High-Side Power Switch 18 BTS 5441G V1.0, ...
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Electrical Characteristics = -40 °C to +150 °C (unless otherwise specified typical values Pos. Parameter Over-Load Protection 4.2.1 Load current limitation 4.2.2 Repetitive short ...
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Diagnosis For diagnosis purpose, the BTS 5441G provides an Enhanced IntelliSense signal at pins IS1 to IS4 that is enabled by pin SEN. The current sense signal to the load current (ratio In case of open load in OFF-state, ...
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Table 1 Truth Table Operation Mode Normal Operation (ON) Current Limitation Short Circuit to GND Over-Temperature Short Circuit Open Load L = Low Level High Level high impedance, potential depends on leakage currents ...
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In case of over-current as well as over-temperature, the current sense signal is switched off result, one threshold is enough to distinguish between normal and faulty operation. Open load and over-load can be differentiated by switching off the ...
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V has to be taken into account. OUT(OL) I defines the leakage current in the complete system e.g. caused by humidity. leakage V is the minimum supply voltage at which the open load diagnosis ...
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Electrical Characteristics = -40 °C to +150 ° typical values Pos. Parameter Open Load at OFF state 4.3.1 Open load detection threshold voltage 4.3.2 ...
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typical values Pos. Parameter 4.3.10 Current sense leakage, while diagnosis disabled 4.3.11 Current sense settling static ±10% time to ...
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Package Outlines BTS 5441G P-DSO-28-19 (Plastic Dual Small Outline Package) 1.27 +0. 18.1 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of ...
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Revision History Version Date Changes V1.0 04-02-27 initial version of Data Sheet Data Sheet Smart High-Side Power Switch 27 BTS 5441G Revision History 2004-02-27 ...
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Data Sheet Smart High-Side Power Switch 28 BTS 5441G Revision History V1.0, 2004-02-27 ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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... Published by Infineon Technologies AG ...