TDA21101G Infineon Technologies, TDA21101G Datasheet
TDA21101G
Specifications of TDA21101G
TDA21101GXT
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TDA21101G Summary of contents
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Preliminary Data Sheet High speed Driver with bootstrapping for dual Power MOSFETs Features Fast rise and fall times for frequencies MHz Capable of sinking and sourcing of more than 4 A peak current for lowest switching losses ...
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Preliminary Data Sheet General Description The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, ...
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Preliminary Data Sheet Electrical Characteristic °C, unless otherwise specified Parameter Symbol Supply Characteristic Bias supply current I VCC Quiescent current I VCCQ Power supply current I PVCC Under-voltage lockout Under-voltage lockout Input Characteristic Current in ‘PWM’ ...
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Preliminary Data Sheet Turn-off propagation t d(OFF)_LS delay Low Side Rise time Low Side t r_LS Fall time Low Side t f_LS Operating Conditions °C, unless otherwise specified Parameter Symbol Voltage supplied to V VCC ‘VCC’ ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...